sep.2000 cm a s(4 - mounting holes) b 3 - m6 nuts e d q k k k f r qn g p h j u c l m h t c measured point e2 g1 e1 g2 e2 c1 c2e1 t dimensions inches millimeters a 4.25 108.0 b 2.44 62.0 c 1.14 +0.04/-0.02 29 +1.0/-0.5 d 3.66 0.01 93.0 0.25 e 1.88 0.01 48.0 0.25 f 0.87 22.0 g 0.16 4.0 h 0.24 6.0 j 0.59 15.0 dimensions inches millimeters k 0.71 18.0 l 0.87 22.0 m 0.33 8.5 n 0.10 2.5 p 0.85 21.5 q 0.98 25.0 r 0.11 2.8 s 0.25 dia. 6.5 dia. t 0.6 15.15 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of two igbts in a half-br idge configuration with each transistor having a re- verse-connected super-fast recov- ery free-wheel diode. all compo- nents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM400DU-12H is a 600v (v ces ), 400 ampere dual igbt module. current rating v ces type amperes volts (x 50) cm 400 12 outline drawing and circuit diagram mitsubishi igbt modules CM400DU-12H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM400DU-12H high power switching use insulated type absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 400 amperes peak collector current (t j 150 c) i cm 800* amperes emitter current** (t c = 25 c) i e 400 amperes peak emitter current** i em 800* amperes maximum collector dissipation (t c = 25 c) p c 1130 w atts mounting torque, m6 main terminal C 3.5~4.5 n m mounting torque, m6 mounting C 3.5~4.5 n m weight C 400 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 40ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 400a, v ge = 15v, t j = 25 c C 2.4 3.0 volts i c = 400a, v ge = 15v, t j = 125 c C 2.6 C volts total gate charge q g v cc = 300v, i c = 400a, v ge = 15v C 800 C nc emitter-collector voltage* v ec i e = 400a, v ge = 0v C C 2.6 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 35.2 nf output capacitance c oes v ce = 10v, v ge = 0v C C 19.2 nf reverse transfer capacitance c res C C 5.2 nf resistive turn-on delay time t d(on) v cc = 300v, i c = 400a, C C 250 ns load rise time t r v ge1 = v ge2 = 15v, C C 600 ns switch turn-off delay time t d(off) r g = 1.6 w , resistive C C 350 ns times fall time t f load switching operation C C 300 ns diode reverse recovery time t rr i e = 400a, di e /dt = -800a/ m sC C160ns diode reverse recovery charge q rr i e = 400a, di e /dt = -800a/ m s C 0.96 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module C C 0.11 c/w thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module C C 0.18 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.020 C c/w
sep.2000 mitsubishi igbt modules CM400DU-12H high power switching use insulated type gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 300 600 16 12 8 4 0 900 1200 v cc = 300v v cc = 200v i c = 400a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 i rr t rr di/dt = -800a/ m sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) 10 3 10 1 10 2 10 3 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 1.6 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 v ge = 0v 10 1 c ies c oes c res 0.6 1.0 1.4 1.8 2.6 2.2 3.0 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) t j = 25 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 160a i c = 800a i c = 400a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 160 320 480 640 4 3 2 1 0 800 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 640 480 320 160 0 800 v ce = 10v t j = 25 c t j = 125 c collector current, i c , (amperes) output characteristics (typical) 0 480 160 0 320 540 800 collector-emitter voltage, v ce , (volts) 246810 v ge = 20v 15 14 13 12 11 8 t j = 25 o c 10 9
sep.2000 mitsubishi igbt modules CM400DU-12H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.11 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25 c per unit base = r th(j-c) = 0.18 c/w z th = r th ?(normalized value)
|
